完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Chao, Chuen-Guang | en_US |
dc.contributor.author | Chen, Chien-Chon | en_US |
dc.contributor.author | Chen, Jung-Hsuan | en_US |
dc.contributor.author | Kuo, Chin-Guo | en_US |
dc.date.accessioned | 2014-12-16T06:16:14Z | - |
dc.date.available | 2014-12-16T06:16:14Z | - |
dc.date.issued | 2006-03-09 | en_US |
dc.identifier.govdoc | C25D011/00 | zh_TW |
dc.identifier.govdoc | B23H009/00 | zh_TW |
dc.identifier.uri | http://hdl.handle.net/11536/105710 | - |
dc.description.abstract | The present invention pertains to a method of manufacturing an aluminum oxide film with arrayed nanometric pores, wherein a commercial aluminum substrate is provided firstly; then the aluminum substrate is annealed and then electro-polished in order to have a mirror-like surface, and then anodized in order to form a aluminum oxide film with a plurality of nanometric pores, which are aligned in array, and then annealed in order that an oxidation reaction can happen thereon and generates oxide, which via self-diffusion, fills some of smaller pores with the pores size being uniformed; lastly a pore-widening is undertaken in order to increase the diameters of the pores. The present invention can accomplish the nanometric pores aligned in array and with an uniform pore diameter, and simultaneously have the advantages of simplified manufacturing process, easier operational control and reduced cost. | zh_TW |
dc.language.iso | zh_TW | en_US |
dc.title | Method of manufacturing aluminum oxide film with arrayed nanometric pores | zh_TW |
dc.type | Patents | en_US |
dc.citation.patentcountry | USA | zh_TW |
dc.citation.patentnumber | 20060049059 | zh_TW |
顯示於類別: | 專利資料 |