標題: Manufacturing method of thin film transistor
作者: Chang, Kow Ming
Chung, Yuan Hung
公開日期: 13-Jan-2005
摘要: A method of manufacturing a thin film transistor for solving the drawbacks of the prior arts is disclosed. The method includes steps of providing an insulating substrate, sequentially forming a source/drain layer, a primary gate insulating layer, and a first conducting layer on the insulating substrate, etching the first conducting layer to form a primary gate; sequentially forming a secondary gate insulating layer and a second conducting layer on the primary gate; and etching the second conducting layer to form a first secondary gate and a second secondary gate.
官方說明文件#: H01L021/00
H01L021/84
URI: http://hdl.handle.net/11536/105756
專利國: USA
專利號碼: 20050009253
Appears in Collections:Patents


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