Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 陳方中 | en_US |
| dc.contributor.author | 林書丞 | en_US |
| dc.date.accessioned | 2014-12-16T06:16:23Z | - |
| dc.date.available | 2014-12-16T06:16:23Z | - |
| dc.date.issued | 2014-10-21 | en_US |
| dc.identifier.govdoc | H01L031/0256 | zh_TW |
| dc.identifier.govdoc | H01L031/18 | zh_TW |
| dc.identifier.uri | http://hdl.handle.net/11536/105819 | - |
| dc.description.abstract | 一種光偵測元件之形成方法，包括：提供基板；在基板上形成透明導電薄膜；在透明導電薄膜上形成導電高分子層；在導電高分子層上形成有機主動層；在有機主動層上形成電荷阻擋層；以及在電荷阻擋層上形成陰極金屬。 | zh_TW |
| dc.language.iso | zh_TW | en_US |
| dc.title | 提高光偵測度之光偵測元件及其形成方法 | zh_TW |
| dc.type | Patents | en_US |
| dc.citation.patentcountry | TWN | zh_TW |
| dc.citation.patentnumber | I458105 | zh_TW |
| Appears in Collections: | Patents | |
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