Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 張翼 | en_US |
| dc.contributor.author | 張嘉華 | en_US |
| dc.contributor.author | 林岳欽 | en_US |
| dc.contributor.author | 陳宥綱 | en_US |
| dc.contributor.author | 劉世謙 | en_US |
| dc.date.accessioned | 2014-12-16T06:16:27Z | - |
| dc.date.available | 2014-12-16T06:16:27Z | - |
| dc.date.issued | 2014-10-21 | en_US |
| dc.identifier.govdoc | H01L029/778 | zh_TW |
| dc.identifier.uri | http://hdl.handle.net/11536/105883 | - |
| dc.description.abstract | 一種具有高電子遷移率之氮化鎵電晶體結構，包括一基板、一位於基板上之氮化鎵磊晶層、至少一位於氮化鎵磊晶層上之歐姆接觸層、一位於氮化鎵磊晶層之上的金屬閘極層、以及一位於金屬閘極層與氮化鎵磊晶層之間的擴散阻擋層。利用此一擴散阻擋層，可用以阻擋金屬閘極層之擴散，使得氮化鎵電晶體結構具有較佳之元件特性及可靠度。 | zh_TW |
| dc.language.iso | zh_TW | en_US |
| dc.title | 具有高電子遷移率之氮化鎵電晶體結構 | zh_TW |
| dc.type | Patents | en_US |
| dc.citation.patentcountry | TWN | zh_TW |
| dc.citation.patentnumber | I458092 | zh_TW |
| Appears in Collections: | Patents | |
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