Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 張志榜 | en_US |
| dc.contributor.author | 吳耀銓 | en_US |
| dc.date.accessioned | 2014-12-16T06:16:28Z | - |
| dc.date.available | 2014-12-16T06:16:28Z | - |
| dc.date.issued | 2013-02-01 | en_US |
| dc.identifier.govdoc | H01L021/20 | zh_TW |
| dc.identifier.uri | http://hdl.handle.net/11536/105907 | - |
| dc.description.abstract | 本發明提供一種利用電漿改善金屬誘發側向結晶層特性的方法，其係利用一含氟離子之電漿對此金屬誘發側向結晶層進行蝕刻，以移除金屬誘發側向結晶層上殘留的金屬成分，並使氟離子進入金屬誘發側向結晶層，進行缺陷的鈍化，以改善金屬誘發側向結晶層特性，使得後續薄膜電晶體完成後，能具有高品質與高可靠度。 | zh_TW |
| dc.language.iso | zh_TW | en_US |
| dc.title | 利用電漿改善金屬誘發側向結晶層特性的方法 | zh_TW |
| dc.type | Patents | en_US |
| dc.citation.patentcountry | TWN | zh_TW |
| dc.citation.patentnumber | I384534 | zh_TW |
| Appears in Collections: | Patents | |
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