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dc.contributor.authorLin, Yueh-Chinen_US
dc.contributor.authorChang, Edward Yien_US
dc.contributor.authorYamaguchi, Hiroshien_US
dc.contributor.authorWu, Wei-Chengen_US
dc.contributor.authorChang, Chun-Yenen_US
dc.date.accessioned2014-12-08T15:13:42Z-
dc.date.available2014-12-08T15:13:42Z-
dc.date.issued2007-07-01en_US
dc.identifier.issn0018-9383en_US
dc.identifier.urihttp://dx.doi.org/10.1109/TED.2007.899398en_US
dc.identifier.urihttp://hdl.handle.net/11536/10598-
dc.description.abstractIn this paper, delta-doped InGaP/InGaAs pseudomorphic high-electron-mobility transistors (pHEMTs) with doping-profile modifications are investigated in order to improve the device linearity. The proposed modification was based on the third-order intermodulation distortion (IM3) and the third-order intercept point (IP3) analysis using a simple equivalent circuit of the devices. The correlations of the extrinsic transconductance (Gm) with IM3 and IP3 indicate that the flatness of Gin, as a function of gate-bias causes a lower IM3 level. On the other hand, a high Gm with a flatter Gm distribution results in higher IP3 value for the device. Therefore, doping modifications that improve the flatness of the Gm distribution will also improve the device linearity. Doping modifications in the Schottky layer (Schottky layer doped) and in the channel layer (channel doped) of the conventional delta-doped InGaP/InGaAs pHEMT were investigated. It was also found that extra doping, either in the channel region or in the Schottky layer, improved the flatness of the Gm distribution under different gate-bias conditions. This achieved a lower IM3 and a higher IP3 with a small sacrifice in the peak Gm value. The power performances of these devices were tested at different drain biases. Even though it had the lowest electron mobility among the three different types of devices studied, the channel-doped device demonstrated the best overall linearity performance, the highest IP3 value, the lowest IM3 level, and the best adjacent-channel power ratio under code-division multiple-access modulation.en_US
dc.language.isoen_USen_US
dc.subjectchannel dopingen_US
dc.subjectdevice linearityen_US
dc.subjectInGaP/InGaAs pseudomorphic high-electron-mobility transistor (pHEMT)en_US
dc.subjectthird-order intercept point (IP3)en_US
dc.subjectthird-order intermodulation distortion (IM3)en_US
dc.subjectdelta-dopeden_US
dc.titleA delta-doped InGaP/InGaAs pHEMT with different doping profiles for device-linearity improvementen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/TED.2007.899398en_US
dc.identifier.journalIEEE TRANSACTIONS ON ELECTRON DEVICESen_US
dc.citation.volume54en_US
dc.citation.issue7en_US
dc.citation.spage1617en_US
dc.citation.epage1625en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.department友訊交大聯合研發中心zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.contributor.departmentD Link NCTU Joint Res Ctren_US
dc.identifier.wosnumberWOS:000247643800004-
dc.citation.woscount6-
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