完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Cheng, Huang-Chung | en_US |
dc.contributor.author | Lin, Kao-Chao | en_US |
dc.contributor.author | Tai, Han-Chung | en_US |
dc.contributor.author | Juan, Chuan-Ping | en_US |
dc.contributor.author | Lai, Rui-Ling | en_US |
dc.contributor.author | Liu, Yaw-Shine | en_US |
dc.contributor.author | Chen, Hsia-Wei | en_US |
dc.contributor.author | Syu, Yu-Ying | en_US |
dc.date.accessioned | 2014-12-08T15:13:43Z | - |
dc.date.available | 2014-12-08T15:13:43Z | - |
dc.date.issued | 2007-07-01 | en_US |
dc.identifier.issn | 0021-4922 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1143/JJAP.46.4359 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/10608 | - |
dc.description.abstract | A multilayer catalyst, Co/Cr/Al, was employed to synthesize carbon nanotubes (CNTs) at atmospheric pressure by thermal chemical vapor deposition (thermal CVD). The relative growth rates, calculated on the basis of the average lengths of nanotubes grown at different temperatures, were utilized to estimate an activation energy of 0.84eV for the multilayer catalyst. Such a low activation energy implies that the nucleation and growth of nanombes could be effectively enhanced via the multilayer catalyst due to the well-distributed small catalytic nanoparticles by Al supporting layer and higher activity by Cr co-catalyst layer. It was also found that nanotubes grown using this configuration at 500 degrees C exhibited excellent field emission characteristics, and showed a highly uniform emission image in a phosphor-coated anode plate. | en_US |
dc.language.iso | en_US | en_US |
dc.subject | carbon nanotubes (CNTs) | en_US |
dc.subject | activation energy | en_US |
dc.subject | multilayer catalyst | en_US |
dc.subject | thermal chemical vapor deposition (thermal CVD) | en_US |
dc.subject | field emission | en_US |
dc.title | Growth and field emission characteristics of carbon nanotubes using Co/Cr/Al multilayer catalyst | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1143/JJAP.46.4359 | en_US |
dc.identifier.journal | JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | en_US |
dc.citation.volume | 46 | en_US |
dc.citation.issue | 7A | en_US |
dc.citation.spage | 4359 | en_US |
dc.citation.epage | 4363 | en_US |
dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
dc.identifier.wosnumber | WOS:000248237100074 | - |
dc.citation.woscount | 9 | - |
顯示於類別: | 期刊論文 |