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dc.contributor.authorCheng, Huang-Chungen_US
dc.contributor.authorLin, Kao-Chaoen_US
dc.contributor.authorTai, Han-Chungen_US
dc.contributor.authorJuan, Chuan-Pingen_US
dc.contributor.authorLai, Rui-Lingen_US
dc.contributor.authorLiu, Yaw-Shineen_US
dc.contributor.authorChen, Hsia-Weien_US
dc.contributor.authorSyu, Yu-Yingen_US
dc.date.accessioned2014-12-08T15:13:43Z-
dc.date.available2014-12-08T15:13:43Z-
dc.date.issued2007-07-01en_US
dc.identifier.issn0021-4922en_US
dc.identifier.urihttp://dx.doi.org/10.1143/JJAP.46.4359en_US
dc.identifier.urihttp://hdl.handle.net/11536/10608-
dc.description.abstractA multilayer catalyst, Co/Cr/Al, was employed to synthesize carbon nanotubes (CNTs) at atmospheric pressure by thermal chemical vapor deposition (thermal CVD). The relative growth rates, calculated on the basis of the average lengths of nanotubes grown at different temperatures, were utilized to estimate an activation energy of 0.84eV for the multilayer catalyst. Such a low activation energy implies that the nucleation and growth of nanombes could be effectively enhanced via the multilayer catalyst due to the well-distributed small catalytic nanoparticles by Al supporting layer and higher activity by Cr co-catalyst layer. It was also found that nanotubes grown using this configuration at 500 degrees C exhibited excellent field emission characteristics, and showed a highly uniform emission image in a phosphor-coated anode plate.en_US
dc.language.isoen_USen_US
dc.subjectcarbon nanotubes (CNTs)en_US
dc.subjectactivation energyen_US
dc.subjectmultilayer catalysten_US
dc.subjectthermal chemical vapor deposition (thermal CVD)en_US
dc.subjectfield emissionen_US
dc.titleGrowth and field emission characteristics of carbon nanotubes using Co/Cr/Al multilayer catalysten_US
dc.typeArticleen_US
dc.identifier.doi10.1143/JJAP.46.4359en_US
dc.identifier.journalJAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERSen_US
dc.citation.volume46en_US
dc.citation.issue7Aen_US
dc.citation.spage4359en_US
dc.citation.epage4363en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000248237100074-
dc.citation.woscount9-
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