Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 林鴻志 | en_US |
| dc.contributor.author | 蘇俊榮 | en_US |
| dc.contributor.author | 徐行徽 | en_US |
| dc.date.accessioned | 2014-12-16T06:16:48Z | - |
| dc.date.available | 2014-12-16T06:16:48Z | - |
| dc.date.issued | 2011-04-01 | en_US |
| dc.identifier.govdoc | H01L021/8246 | zh_TW |
| dc.identifier.govdoc | H01L027/112 | zh_TW |
| dc.identifier.uri | http://hdl.handle.net/11536/106097 | - |
| dc.description.abstract | 一種具有奈米線通道之非揮發性記憶體元件及其製造方法，乃利用側向蝕刻方式，使側閘極側壁內縮來形成奈米線模型，從而將奈米線通道製作於側閘極側壁的介電層上，完成具有奈米線通道及透過雙閘極控制之非揮發性記憶體元件，此非揮發性記憶體元件係可達到提升資料寫入和抹除效率，並具有低電壓操作的能力，而且，本發明可在成本低和簡易步驟之製程下，完成重複性高及可量產化之奈米線元件製作。 | zh_TW |
| dc.language.iso | zh_TW | en_US |
| dc.title | 具有奈米線通道之非揮發性記憶體元件及其製造方法 | zh_TW |
| dc.type | Patents | en_US |
| dc.citation.patentcountry | TWN | zh_TW |
| dc.citation.patentnumber | I339879 | zh_TW |
| Appears in Collections: | Patents | |
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