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dc.contributor.author羅廣禮en_US
dc.contributor.author簡昭欣en_US
dc.contributor.author楊宗en_US
dc.contributor.author張俊彥en_US
dc.date.accessioned2014-12-16T06:16:58Z-
dc.date.available2014-12-16T06:16:58Z-
dc.date.issued2008-12-01en_US
dc.identifier.govdocH01L029/04zh_TW
dc.identifier.govdocH01L029/772zh_TW
dc.identifier.urihttp://hdl.handle.net/11536/106206-
dc.description.abstract本發明係提供一種在矽(110)基板上設有壓縮應變矽鍺通道之N型金氧半電晶體架構,其係包括一P-型矽(110)基板、二離子植入區用於源極與汲極、一壓縮應變矽鍺通道層與一閘極結構,其中,在P-型矽(110)基板上成長應變矽鍺電子通道層,以使得電子在[1-10]晶格方向上的傳導有效質量降低,提高電子在[1-10]方向上的傳導速度。因此,本發明係在矽(110)基板上可製作出高電子遷移率的N型金氧半電晶體。本發明所提出的N型金氧半電晶體還可以配合矽(110)基板上之高速P型金氧半電晶體以形成高性能之互補式金氧半電晶體。zh_TW
dc.language.isozh_TWen_US
dc.title在矽（110）基板上設有壓縮應變矽鍺通道之N型金氧半電晶體架構zh_TW
dc.typePatentsen_US
dc.citation.patentcountryTWNzh_TW
dc.citation.patentnumberI303879zh_TW
Appears in Collections:Patents


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