Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 吳耀銓 | en_US |
| dc.contributor.author | 林沛彥 | en_US |
| dc.date.accessioned | 2014-12-16T06:16:59Z | - |
| dc.date.available | 2014-12-16T06:16:59Z | - |
| dc.date.issued | 2008-09-01 | en_US |
| dc.identifier.govdoc | H01L021/205 | zh_TW |
| dc.identifier.uri | http://hdl.handle.net/11536/106219 | - |
| dc.description.abstract | 本案係在提供一種轉移側向覆蓋生長磊晶層之方法,該方法包括下列步驟:(a)提供一第一基板;(b)形成一第一磊晶層於該第一基板上;(c)形成一遮罩層於該第一磊晶層上,並蝕刻該遮罩層以形成至少一圖案;(d)形成一第二磊晶層於該遮罩層上;(e)接合一第二基板於該第二磊晶層上,該第二基板與該第二磊晶層間之接合介面視需要可加入不同之接合媒介層;以及(f)濕式蝕刻該遮罩層,並分離該第二磊晶層與該第一磊晶層,以致獲得具有該第二磊晶層之該第二基板。 | zh_TW |
| dc.language.iso | zh_TW | en_US |
| dc.title | 轉移側向覆蓋生長磊晶層之方法 | zh_TW |
| dc.type | Patents | en_US |
| dc.citation.patentcountry | TWN | zh_TW |
| dc.citation.patentnumber | I300589 | zh_TW |
| Appears in Collections: | Patents | |
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