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dc.contributor.author吳耀銓en_US
dc.contributor.author林其慶en_US
dc.contributor.author侯智元en_US
dc.date.accessioned2014-12-16T06:16:59Z-
dc.date.available2014-12-16T06:16:59Z-
dc.date.issued2008-08-11en_US
dc.identifier.govdocH01L021/20zh_TW
dc.identifier.govdocH01L029/786zh_TW
dc.identifier.urihttp://hdl.handle.net/11536/106225-
dc.description.abstract本發明係提供一種半導體裝置之製造方法,並以晶圓接 合方式捕捉金屬誘發結晶複晶矽薄膜中殘餘金屬之方法,其 係利用鎳金屬誘發側向結晶誘發非晶矽(��-Si)結晶以形成 優異性能之低溫複晶矽薄膜電晶體。然以目前的結晶技術, 通常會使得Ni與NiSi2沉積殘餘而使得其性能降低。在本發 明中係利用已沉積非晶矽之晶圓作為初始的Ni吸氣基板。 藉由該吸氣基板與NILC複晶矽膜的黏合,使其在NILC複晶 矽膜中的Ni金屬殘餘物大幅的降低。zh_TW
dc.language.isozh_TWen_US
dc.title半導體裝置之製造方法zh_TW
dc.typePatentsen_US
dc.citation.patentcountryTWNzh_TW
dc.citation.patentnumberI299881zh_TW
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