Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 吳耀銓 | en_US |
| dc.contributor.author | 林其慶 | en_US |
| dc.contributor.author | 侯智元 | en_US |
| dc.date.accessioned | 2014-12-16T06:16:59Z | - |
| dc.date.available | 2014-12-16T06:16:59Z | - |
| dc.date.issued | 2008-08-11 | en_US |
| dc.identifier.govdoc | H01L021/20 | zh_TW |
| dc.identifier.govdoc | H01L029/786 | zh_TW |
| dc.identifier.uri | http://hdl.handle.net/11536/106225 | - |
| dc.description.abstract | 本發明係提供一種半導體裝置之製造方法,並以晶圓接 合方式捕捉金屬誘發結晶複晶矽薄膜中殘餘金屬之方法,其 係利用鎳金屬誘發側向結晶誘發非晶矽(��-Si)結晶以形成 優異性能之低溫複晶矽薄膜電晶體。然以目前的結晶技術, 通常會使得Ni與NiSi2沉積殘餘而使得其性能降低。在本發 明中係利用已沉積非晶矽之晶圓作為初始的Ni吸氣基板。 藉由該吸氣基板與NILC複晶矽膜的黏合,使其在NILC複晶 矽膜中的Ni金屬殘餘物大幅的降低。 | zh_TW |
| dc.language.iso | zh_TW | en_US |
| dc.title | 半導體裝置之製造方法 | zh_TW |
| dc.type | Patents | en_US |
| dc.citation.patentcountry | TWN | zh_TW |
| dc.citation.patentnumber | I299881 | zh_TW |
| Appears in Collections: | Patents | |
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