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dc.contributor.author洪崇智en_US
dc.date.accessioned2014-12-16T06:17:06Z-
dc.date.available2014-12-16T06:17:06Z-
dc.date.issued2006-12-21en_US
dc.identifier.govdocH01L021/765zh_TW
dc.identifier.urihttp://hdl.handle.net/11536/106286-
dc.description.abstract本發明係揭露一種由金氧半場效電晶體臨界電壓與熱效應電壓所組成之參考電壓電路。本發明以現有的能隙電壓架構為基礎,並使用了工作於弱反轉層的場效電晶體代替傳統的雙載子電晶體,以產生與溫度係數正相關之電流,再由金氧半場效電晶體臨界電壓產生另一與溫度係數負相關之電流,結合以上兩個電流而產生一不隨溫度變化而改變之穩定參考電流,再將此電流通過一電阻,以產生一與溫度係數完全不相關之參考電壓。zh_TW
dc.language.isozh_TWen_US
dc.title由金氧半場效電晶體臨界電壓與熱效應電壓所組成之參考電壓電路zh_TW
dc.typePatentsen_US
dc.citation.patentcountryTWNzh_TW
dc.citation.patentnumberI269402zh_TW
Appears in Collections:Patents


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