Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 吳耀銓 | en_US |
| dc.contributor.author | 胡國仁 | en_US |
| dc.contributor.author | 賴育銘 | en_US |
| dc.contributor.author | 侯智元 | en_US |
| dc.date.accessioned | 2014-12-16T06:17:07Z | - |
| dc.date.available | 2014-12-16T06:17:07Z | - |
| dc.date.issued | 2006-11-21 | en_US |
| dc.identifier.govdoc | H01L021/316 | zh_TW |
| dc.identifier.uri | http://hdl.handle.net/11536/106296 | - |
| dc.description.abstract | 本發明關於利用鎳誘發非晶矽結晶方法而製造出大的多晶矽顆粒，其利用背面預先鍍上Ni之矽晶圓當做Ni的晶種層以控制Ni擴散的數量，及採取壓印技術以控制多晶矽成長之成核位置，而製造出大的多晶矽顆粒。 | zh_TW |
| dc.language.iso | zh_TW | en_US |
| dc.title | 利用晶體成長過濾基板而進行鎳誘發非晶矽結晶 | zh_TW |
| dc.type | Patents | en_US |
| dc.citation.patentcountry | TWN | zh_TW |
| dc.citation.patentnumber | I267142 | zh_TW |
| Appears in Collections: | Patents | |
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