Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 韋光華 | en_US |
| dc.contributor.author | 周嘉宏 | en_US |
| dc.date.accessioned | 2014-12-16T06:17:07Z | - |
| dc.date.available | 2014-12-16T06:17:07Z | - |
| dc.date.issued | 2006-11-01 | en_US |
| dc.identifier.govdoc | C09K011/06 | zh_TW |
| dc.identifier.govdoc | H05B033/14 | zh_TW |
| dc.identifier.uri | http://hdl.handle.net/11536/106301 | - |
| dc.description.abstract | 本發明為提供可製成高分子發光二極體之奈米複材，而奈米複材是導入具表面改質之硫化鎘(量子點)於樹枝狀聚茀發光高分子而形成，並可有效地提升螢光發光效率及電激光效率，製成發光二極體元件後亦能增加元件之穩定性及電性。 | zh_TW |
| dc.language.iso | zh_TW | en_US |
| dc.title | 以半導體量子點加強螢光效率之高分子發光二極體 | zh_TW |
| dc.type | Patents | en_US |
| dc.citation.patentcountry | TWN | zh_TW |
| dc.citation.patentnumber | I265192 | zh_TW |
| Appears in Collections: | Patents | |
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