Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 呂志鵬 | en_US |
| dc.contributor.author | 凃弘恩 | en_US |
| dc.contributor.author | 邱維剛 | en_US |
| dc.date.accessioned | 2014-12-16T06:17:17Z | - |
| dc.date.available | 2014-12-16T06:17:17Z | - |
| dc.date.issued | 2014-08-21 | en_US |
| dc.identifier.govdoc | C23C016/34 | zh_TW |
| dc.identifier.govdoc | C23C016/42 | zh_TW |
| dc.identifier.govdoc | C07F007/10 | zh_TW |
| dc.identifier.govdoc | H01L021/311 | zh_TW |
| dc.identifier.uri | http://hdl.handle.net/11536/106338 | - |
| dc.description.abstract | 本發明提出一種掺碳氮化矽薄膜及其製造方法與裝置。該掺碳氮化矽薄膜係利用具有選自雙(二甲基胺基)二乙基矽烷、N,N-二甲基三甲基矽胺以及具有氮矽鍵結的一環狀結構其中至少之一的前驅物(precursor)所製成。該製造掺碳氮化矽薄膜的方法包含：提供具有選自雙(二甲基胺基)二乙基矽烷、N,N-二甲基三甲基矽胺或具有氮矽鍵結的環狀結構其中至少之一的前驅物來製備掺碳氮化矽薄膜。該製造掺碳氮化矽薄膜的裝置，包含：反應室；以及與該反應室相連接的容器，該容器含有如前所述的該前驅物。 | zh_TW |
| dc.language.iso | zh_TW | en_US |
| dc.title | 掺碳氮化矽薄膜及其製造方法與裝置 | zh_TW |
| dc.type | Patents | en_US |
| dc.citation.patentcountry | TWN | zh_TW |
| dc.citation.patentnumber | I449802 | zh_TW |
| Appears in Collections: | Patents | |
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