Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 陳三元 | en_US |
| dc.contributor.author | 林晉慶 | en_US |
| dc.date.accessioned | 2014-12-16T06:17:18Z | - |
| dc.date.available | 2014-12-16T06:17:18Z | - |
| dc.date.issued | 2005-11-11 | en_US |
| dc.identifier.govdoc | B32B015/04 | zh_TW |
| dc.identifier.govdoc | B32B015/04 | zh_TW |
| dc.identifier.uri | http://hdl.handle.net/11536/106356 | - |
| dc.description.abstract | 本發明係為一p型氧化鋅薄膜之製作方法，其為在鍍有氮化矽薄膜的矽基板上，經由磁控射頻濺鍍法，在低溫(50℃)成長氧化鋅薄膜，再經過氮離子佈值處理及熱退火處理，改善其結晶性，並提升本質性紫外光區訊號，降低可見光放射強度，使其具有高電洞濃度、高電洞載子遷移率、高穩定性及光電特性佳等特性，可應用於p-n接面和半導體異質結構的光電元件上。 | zh_TW |
| dc.language.iso | zh_TW | en_US |
| dc.title | p型氧化鋅薄膜之製作方法 | zh_TW |
| dc.type | Patents | en_US |
| dc.citation.patentcountry | TWN | zh_TW |
| dc.citation.patentnumber | I243096 | zh_TW |
| Appears in Collections: | Patents | |
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