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dc.contributor.author吳耀銓en_US
dc.contributor.author林沛彥en_US
dc.contributor.author彭顯智en_US
dc.date.accessioned2014-12-16T06:17:20Z-
dc.date.available2014-12-16T06:17:20Z-
dc.date.issued2005-06-01en_US
dc.identifier.govdocH01L021/20zh_TW
dc.identifier.govdocH01L021/20zh_TW
dc.identifier.urihttp://hdl.handle.net/11536/106380-
dc.description.abstract本發明係一種利用晶圓接合方式剝離無遮罩層懸浮生長之氮化鎵磊晶層製造方法,係同時利用可供氮化鎵成長之晶種從有限的區域進行磊晶(selective area growth)與無遮罩層懸浮生長騰空於基材之上。因基材(substrate)與氮化鎵晶種層之熱膨脹係數不同,藉由配合退火(anneal)過程與晶圓接合(wafer bonding)技術來達到分離氮化鎵磊晶層與磊晶基板,或氮化鎵磊晶層基板轉移之目的。可使所分離之磊晶基板不受轉移過程傷害可重複使用,達到降低成本之功效,並可達到將高品質氮化鎵磊晶層轉移至各類型基板,除了可供給各種用途使用外也可同時解決現存基板所帶來製程或使用上之各種問題(例如不導電、不易切割、不易散熱等等..)。zh_TW
dc.language.isozh_TWen_US
dc.title利用晶圓接合方式剝離無遮罩層懸浮生長之氮化鎵磊晶層製造方法zh_TW
dc.typePatentsen_US
dc.citation.patentcountryTWNzh_TW
dc.citation.patentnumberI233635zh_TW
Appears in Collections:Patents


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