Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 葉清發 | en_US |
dc.contributor.author | 陳柏翰 | en_US |
dc.contributor.author | 王碩晟 | en_US |
dc.contributor.author | 徐中玓 | en_US |
dc.date.accessioned | 2014-12-16T06:17:26Z | - |
dc.date.available | 2014-12-16T06:17:26Z | - |
dc.date.issued | 2004-06-21 | en_US |
dc.identifier.govdoc | C23C016/40 | zh_TW |
dc.identifier.govdoc | C23C016/40 | zh_TW |
dc.identifier.uri | http://hdl.handle.net/11536/106432 | - |
dc.description.abstract | 一種低溫沉積氧化層的方法,在利用液相沉積氧化層之前先使用臭氧處理,以於基板表面成長原生氧化層,再沉積液相氧化層,並且可以於氧化層形成後施以電漿退火處理,可獲得高品質氧化膜,而所有製程均可在室溫下進行。 | zh_TW |
dc.language.iso | zh_TW | en_US |
dc.title | 低溫沉積氧化層的方法 | zh_TW |
dc.type | Patents | en_US |
dc.citation.patentcountry | TWN | zh_TW |
dc.citation.patentnumber | 00593735 | zh_TW |
Appears in Collections: | Patents |
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