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dc.contributor.author葉清發en_US
dc.contributor.author陳柏翰en_US
dc.contributor.author王碩晟en_US
dc.contributor.author徐中玓en_US
dc.date.accessioned2014-12-16T06:17:26Z-
dc.date.available2014-12-16T06:17:26Z-
dc.date.issued2004-06-21en_US
dc.identifier.govdocC23C016/40zh_TW
dc.identifier.govdocC23C016/40zh_TW
dc.identifier.urihttp://hdl.handle.net/11536/106432-
dc.description.abstract一種低溫沉積氧化層的方法,在利用液相沉積氧化層之前先使用臭氧處理,以於基板表面成長原生氧化層,再沉積液相氧化層,並且可以於氧化層形成後施以電漿退火處理,可獲得高品質氧化膜,而所有製程均可在室溫下進行。zh_TW
dc.language.isozh_TWen_US
dc.title低溫沉積氧化層的方法zh_TW
dc.typePatentsen_US
dc.citation.patentcountryTWNzh_TW
dc.citation.patentnumber00593735zh_TW
Appears in Collections:Patents


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