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dc.contributor.author李承士en_US
dc.contributor.author張翼en_US
dc.date.accessioned2014-12-16T06:17:31Z-
dc.date.available2014-12-16T06:17:31Z-
dc.date.issued2003-04-11en_US
dc.identifier.govdocH01L023/544zh_TW
dc.identifier.govdocH01L023/544zh_TW
dc.identifier.urihttp://hdl.handle.net/11536/106465-
dc.description.abstract本創作半導體製程之對準標記,該對準標記具備X、Y兩方向游標尺及半圓游標尺,且該對準標記係由主刻度與次刻度所組成;藉由本創作進行光罩對準校正,毋需多次的對準、曝光、顯影、檢驗誤差之繁瑣流程,僅需一次的對準操作即可以將前後道光罩偏差量控制在0.1μm,完成精確的光罩對準。zh_TW
dc.language.isozh_TWen_US
dc.title半導體製程之對準標記zh_TW
dc.typePatentsen_US
dc.citation.patentcountryTWNzh_TW
dc.citation.patentnumber00528204zh_TW
Appears in Collections:Patents


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