Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 林岳欽 | en_US |
| dc.contributor.author | 張翼 | en_US |
| dc.contributor.author | 莊庭維 | en_US |
| dc.date.accessioned | 2014-12-16T06:17:41Z | - |
| dc.date.available | 2014-12-16T06:17:41Z | - |
| dc.date.issued | 2014-06-16 | en_US |
| dc.identifier.govdoc | H01L029/78 | zh_TW |
| dc.identifier.govdoc | H01L029/40 | zh_TW |
| dc.identifier.uri | http://hdl.handle.net/11536/106537 | - |
| dc.description.abstract | 本發明提供一種閘極堆疊結構及包含其之金屬氧化物半導體元件以及其製作方法。上述電晶體之閘極堆疊結構,包含一基板;一半導體層,設置於該基板上;一閘極介電層,設置於該半導體層上,其中該閘極介電層係包含交錯堆疊之氧化鑭(La2O3)及氧化鉿(HfO2)所構成的複合氧化物層;以及一閘極電極層,設置於該閘極介電層上。 | zh_TW |
| dc.language.iso | zh_TW | en_US |
| dc.title | 閘極堆疊結構及包含其之金屬氧化物半導體元件及閘極堆疊結構之製造方法 | zh_TW |
| dc.type | Patents | en_US |
| dc.citation.patentcountry | TWN | zh_TW |
| dc.citation.patentnumber | 201423989 | zh_TW |
| Appears in Collections: | Patents | |
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