Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 張翼 | en_US |
| dc.contributor.author | 吳雲驥 | en_US |
| dc.contributor.author | 林岳欽 | en_US |
| dc.date.accessioned | 2014-12-16T06:17:44Z | - |
| dc.date.available | 2014-12-16T06:17:44Z | - |
| dc.date.issued | 2014-07-21 | en_US |
| dc.identifier.govdoc | H01L029/778 | zh_TW |
| dc.identifier.govdoc | H01L021/336 | zh_TW |
| dc.identifier.uri | http://hdl.handle.net/11536/106560 | - |
| dc.description.abstract | 所揭示者為一種適合做為半導體元件之砷化鎵金氧半導體假型高電遷性電晶體(MOS-PHEMT)的結構，及一種製造此結構的方法。此MOS-PHEMT結構的特徵在於具有一層以原子層沉積方式形成的閘極介電質，且該閘極介電質是由以下任一種材料製成：Al2O3、HfO2、La2O3或ZrO2；使得包含此MOS-PHEMT結構的元件，例如高頻開關元件，具有較低的閘極漏電流、較少的直流電力損耗、較少的衰減損耗以及較佳的隔絕性質。 | zh_TW |
| dc.language.iso | zh_TW | en_US |
| dc.title | 可供製造高電遷性電晶體之結構、包含此結構的元件及其之製造方法 | zh_TW |
| dc.type | Patents | en_US |
| dc.citation.patentcountry | TWN | zh_TW |
| dc.citation.patentnumber | I446532 | zh_TW |
| Appears in Collections: | Patents | |
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