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dc.contributor.authorLin, Gong-Ruen_US
dc.contributor.authorYu, Kun-Chiehen_US
dc.contributor.authorPan, Ci-Lingen_US
dc.contributor.authorLiao, Yu-Shengen_US
dc.date.accessioned2014-12-08T15:13:47Z-
dc.date.available2014-12-08T15:13:47Z-
dc.date.issued2007-07-01en_US
dc.identifier.issn0733-8724en_US
dc.identifier.urihttp://dx.doi.org/10.1109/JLT.2007.897722en_US
dc.identifier.urihttp://hdl.handle.net/11536/10662-
dc.description.abstractWe demonstrate a novel all-optical noninverted OC-192 return-to-zero (RZ) decision-gate by using a semiconductor optical amplifier (SOA) which is gain-controlled to achieve an extremely high cross-gain-modulation depth and a narrow gain window. A dark-optical-comb generated by reshaping the optical clock RZ data in a Mach-Zehnder intensity modulator is employed as an injecting source to temporally deplete most of the gain in the SOA. Such a dark-optical-comb injected SOA decision-gate exhibits improved 311 regeneration performances such as a timing tolerance of 33.5 ps, a Q-factor of 8.1, an input dynamical tolerance of 14 dB, and an extinction ratio (ER) of 14 dB. The deviation between the wavelengths of backward injected dark-optical-comb and input RZ data for optimizing the ER of the decision-gate is determined as Delta lambda = 19 nm. Under a threshold operating dark-optical-comb power of 7 dBm, such a decision-gate can recover the - 18.5-dBm degraded RZ data with a bit-error-rate of less than 10(-9) at 10 Gb/s. A negative power penalty of -4.2 dB is demonstrated for the RZ data after 50-km propagation and decision gating.en_US
dc.language.isoen_USen_US
dc.subjectall opticalen_US
dc.subjectdecision gateen_US
dc.subjectgain shapingen_US
dc.subjectinjectionen_US
dc.subjectOC-192en_US
dc.subjectoptical comben_US
dc.subjectreturn to zero (RZ)en_US
dc.subjectsemiconductor optical amplifier (SOA)en_US
dc.titleAll-optical decision-gating of 10-Gb/s RZ data in a semiconductor optical amplifier temporally gain-shaped with dark-optical-comben_US
dc.typeArticleen_US
dc.identifier.doi10.1109/JLT.2007.897722en_US
dc.identifier.journalJOURNAL OF LIGHTWAVE TECHNOLOGYen_US
dc.citation.volume25en_US
dc.citation.issue7en_US
dc.citation.spage1651en_US
dc.citation.epage1658en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000248020400001-
dc.citation.woscount4-
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