Power scale-up of the diode-pumped actively Q-switched Nd : YVO4 Raman laser with an undoped YVO4 crystal as a Raman shifter

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DC Field	Value	Language
dc.contributor.author	Su, K. W.	en_US
dc.contributor.author	Chang, Y. T.	en_US
dc.contributor.author	Chen, Y. F.	en_US
dc.date.accessioned	2014-12-08T15:13:51Z	-
dc.date.available	2014-12-08T15:13:51Z	-
dc.date.issued	2007-06-01	en_US
dc.identifier.issn	0946-2171	en_US
dc.identifier.uri	http://dx.doi.org/10.1007/s00340-007-2648-0	en_US
dc.identifier.uri	http://hdl.handle.net/11536/10703	-
dc.description.abstract	With an undoped YVO4 crystal as a Raman shifter, we substantially improved the reliability and the output performance of an actively Q-switched 1176-nm Nd:YVO4 Raman laser. With an incident pump power of 18.7 W, the average power is greater than 2.6 W at 80 kHz. The pulse width of the pulse envelope is shorter then 5 ns with mode-locked modulation. With an incident pump power of 12.7 W, the pulse energy and peak power is higher than 43 mu J and 14 kW at 40 kHz.	en_US
dc.language.iso	en_US	en_US
dc.title	Power scale-up of the diode-pumped actively Q-switched Nd : YVO4 Raman laser with an undoped YVO4 crystal as a Raman shifter	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1007/s00340-007-2648-0	en_US
dc.identifier.journal	APPLIED PHYSICS B-LASERS AND OPTICS	en_US
dc.citation.volume	88	en_US
dc.citation.issue	1	en_US
dc.citation.spage	47	en_US
dc.citation.epage	50	en_US
dc.contributor.department	電子物理學系	zh_TW
dc.contributor.department	Department of Electrophysics	en_US
dc.identifier.wosnumber	WOS:000247306900008	-
dc.citation.woscount	12	-
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