統計資料
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|---|---|
| Transient charging and discharging behaviors of border traps in the dual-layer HfO2/SiO2 high-k gate stack observed by using low-frequency charge pumping method | 110 |
本月總瀏覽
| 十月 2025 | 十一月 2025 | 十二月 2025 | |
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| Transient charging and discharging behaviors of border traps in the dual-layer HfO2/SiO2 high-k gate stack observed by using low-frequency charge pumping method | 2 | 1 | 2 |
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| 000246929200008.pdf | 9 |
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