Vertical-channel organic thin-film transistors with meshed electrode and low leakage current

Abstract

In this study, we have successfully fabricated vertical-channel organic thin-film transistors with a channel length smaller than 100nm. It is found that Fowler-Nordheim tunneling is the dominant mechanism determining the ultra short-channel device behavior. To improve the gate control capability, a meshed source electrode pad had been used. This significantly lowers the gate and drain driving voltages (<10V), improves the saturation characteristics and reduces the leakage current. The improvement may be due to the fringing field around the source electrode, which suppresses the tunneling effect.