標題: | Oxygen ion implantation isolation planar process for AlGaN/GaN HEMTs |
作者: | Shiu, Jin-Yu Huang, Jui-Chien Desmaris, Vincent Chang, Chia-Ta Lu, Chung-Yu Kumakura, Kazuhide Makimoto, Toshiki Zirath, Herbert Rorsman, Niklas Chang, Edward Yi 材料科學與工程學系 Department of Materials Science and Engineering |
關鍵字: | GaN;high electron mobility transistors (HEMTs);implantation;power density;pulsed I-V;transient |
公開日期: | 1-六月-2007 |
摘要: | A multienergy oxygen ion implantation process was demonstrated to be compatible With the processing of high-power microwave AlGaN/GaN high electron mobility transistors (HEMTs). HEMTs that are isolated by this process exhibited gate-lag- and drain-lag-free operation; A maximum output power density of 5.3 W/mm at V-gs = -4 V and V-ds = 50 V and a maximum power added efficiency of 51.5% at V-gs = -4 V and V-ds = 30 V at 3 GHz were demonstrated on HEMTs without field plates on sapphire substrate. This isolation process results in planar HEMTs, circumventing potential problems with enhanced gate leakage due to the gate contacting the 2-D electron gas at the mesa sidewall. |
URI: | http://dx.doi.org/10.1109/LED.2007.896904 http://hdl.handle.net/11536/10742 |
ISSN: | 0741-3106 |
DOI: | 10.1109/LED.2007.896904 |
期刊: | IEEE ELECTRON DEVICE LETTERS |
Volume: | 28 |
Issue: | 6 |
起始頁: | 476 |
結束頁: | 478 |
顯示於類別: | 期刊論文 |