標題: Oxygen ion implantation isolation planar process for AlGaN/GaN HEMTs
作者: Shiu, Jin-Yu
Huang, Jui-Chien
Desmaris, Vincent
Chang, Chia-Ta
Lu, Chung-Yu
Kumakura, Kazuhide
Makimoto, Toshiki
Zirath, Herbert
Rorsman, Niklas
Chang, Edward Yi
材料科學與工程學系
Department of Materials Science and Engineering
關鍵字: GaN;high electron mobility transistors (HEMTs);implantation;power density;pulsed I-V;transient
公開日期: 1-六月-2007
摘要: A multienergy oxygen ion implantation process was demonstrated to be compatible With the processing of high-power microwave AlGaN/GaN high electron mobility transistors (HEMTs). HEMTs that are isolated by this process exhibited gate-lag- and drain-lag-free operation; A maximum output power density of 5.3 W/mm at V-gs = -4 V and V-ds = 50 V and a maximum power added efficiency of 51.5% at V-gs = -4 V and V-ds = 30 V at 3 GHz were demonstrated on HEMTs without field plates on sapphire substrate. This isolation process results in planar HEMTs, circumventing potential problems with enhanced gate leakage due to the gate contacting the 2-D electron gas at the mesa sidewall.
URI: http://dx.doi.org/10.1109/LED.2007.896904
http://hdl.handle.net/11536/10742
ISSN: 0741-3106
DOI: 10.1109/LED.2007.896904
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 28
Issue: 6
起始頁: 476
結束頁: 478
顯示於類別:期刊論文


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