Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Lin, Yen-Fu | en_US |
dc.contributor.author | Jian, Wen-Bin | en_US |
dc.contributor.author | Wang, C. P. | en_US |
dc.contributor.author | Suen, Yuen-Wuu | en_US |
dc.contributor.author | Wu, Zhong-Yi | en_US |
dc.contributor.author | Chen, Fu-Rong | en_US |
dc.contributor.author | Kai, Ji-Jung | en_US |
dc.contributor.author | Lin, Juhn-Jong | en_US |
dc.date.accessioned | 2014-12-08T15:14:01Z | - |
dc.date.available | 2014-12-08T15:14:01Z | - |
dc.date.issued | 2007-05-28 | en_US |
dc.identifier.issn | 0003-6951 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1063/1.2745648 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/10780 | - |
dc.description.abstract | Single crystalline ZnO nanowires (NWs) with a circular cross section and similar to 40 nm in diameter have been synthesized and utilized to fabricate two-contact ZnO NW devices. The electrical properties of the NW devices can be categorized into two classes according to the magnitude of their room-temperature resistances. I-V curves of low-resistance devices exhibit downward bending features and their temperature dependent resistances demonstrate thermal activation transport in the ZnO NWs. The high-resistance NW devices can be modeled as back-to-back Schottky contacts and the electron transport through the contacts reveals a variable-range-hopping mechanism. (C) 2007 American Institute of Physics. | en_US |
dc.language.iso | en_US | en_US |
dc.title | Contact to ZnO and intrinsic resistances of individual ZnO nanowires with a circular cross section | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1063/1.2745648 | en_US |
dc.identifier.journal | APPLIED PHYSICS LETTERS | en_US |
dc.citation.volume | 90 | en_US |
dc.citation.issue | 22 | en_US |
dc.citation.epage | en_US | |
dc.contributor.department | 電子物理學系 | zh_TW |
dc.contributor.department | 物理研究所 | zh_TW |
dc.contributor.department | Department of Electrophysics | en_US |
dc.contributor.department | Institute of Physics | en_US |
dc.identifier.wosnumber | WOS:000246909900076 | - |
dc.citation.woscount | 25 | - |
Appears in Collections: | Articles |
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