标题: | Raman spectroscopy study of Zn1-xMnxSe thin films under high-pressure |
作者: | Lin, Chih-Ming Chuu, Der-San 电子物理学系 Department of Electrophysics |
公开日期: | 15-五月-2007 |
摘要: | Raman spectroscopy was used to study phase transitions of substrate-free Zn1-xMnxSe thin films, x=0.07, 0.17, and 0.29, under high pressure up around 20.0 GPa at ambient temperature. One Raman mode, transverse optical split mode, was observed before metallization at 2.9 +/- 1.0, 2.4 +/- 0.8, and 2.1 +/- 0.6 GPa for Zn0.71Mn0.29Se, Zn0.83Mn0.17Se, and Zn0.93Mn0.07Se thin films, respectively. The semiconductor-metallic transition pressure for Zn0.71Mn0.29Se, Zn0.83Mn0.17Se, and Zn0.93Mn0.07Se thin films was observed at 9.4 +/- 0.4, 10.9 +/- 0.6, and 11.7 +/- 0.2 GPa, respectively. It was found that the relation of the ionicity and the reduction of the pressure in transition from semiconductor to metal phase for Zn1-xMnxSe thin films was not the same as that of bulk crystals. The percentage of the increasing of the Gruneison parameter of longitudinal optical mode for semiconductor to metal phase transition might be the important factor inherently related to the reduction of phase transition pressure for substrate-free Zn1-xMnxSe thin film systems. (c) 2007 American Institute of Physics. |
URI: | http://dx.doi.org/10.1063/1.2735679 http://hdl.handle.net/11536/10799 |
ISSN: | 0021-8979 |
DOI: | 10.1063/1.2735679 |
期刊: | JOURNAL OF APPLIED PHYSICS |
Volume: | 101 |
Issue: | 10 |
结束页: | |
显示于类别: | Articles |
文件中的档案:
If it is a zip file, please download the file and unzip it, then open index.html in a browser to view the full text content.