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dc.contributor.authorKao, Chih-Chiangen_US
dc.contributor.authorLu, Tien-Changen_US
dc.contributor.authorKao, Tsung-Tingen_US
dc.contributor.authorLin, Li-Fanen_US
dc.contributor.authorKuo, Hao-Chungen_US
dc.contributor.authorWang, Shing-Chungen_US
dc.date.accessioned2014-12-08T15:14:02Z-
dc.date.available2014-12-08T15:14:02Z-
dc.date.issued2007en_US
dc.identifier.isbn978-1-4244-3590-6en_US
dc.identifier.urihttp://hdl.handle.net/11536/10800-
dc.description.abstractWe report the characteristics of a GaN high-Q micro-cavity light-emitting diode (MCLED). The GaN MCLED showed a very narrow linewidth of 0,52 nm at 10 mA and a dominant emission peak wavelength at 465.3 nm. (C)2007 Optical Society of Americaen_US
dc.language.isoen_USen_US
dc.titleThe Characteristics of a High-Q GaN Micro-cavity Light Emitting Diodesen_US
dc.typeProceedings Paperen_US
dc.identifier.journal2007 CONFERENCE ON LASERS & ELECTRO-OPTICS/QUANTUM ELECTRONICS AND LASER SCIENCE CONFERENCE (CLEO/QELS 2007), VOLS 1-5en_US
dc.citation.spage65en_US
dc.citation.epage66en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000268751000033-
Appears in Collections:Conferences Paper


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