The Characteristics of a High-Q GaN Micro-cavity Light Emitting Diodes

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DC 欄位	值	語言
dc.contributor.author	Kao, Chih-Chiang	en_US
dc.contributor.author	Lu, Tien-Chang	en_US
dc.contributor.author	Kao, Tsung-Ting	en_US
dc.contributor.author	Lin, Li-Fan	en_US
dc.contributor.author	Kuo, Hao-Chung	en_US
dc.contributor.author	Wang, Shing-Chung	en_US
dc.date.accessioned	2014-12-08T15:14:02Z	-
dc.date.available	2014-12-08T15:14:02Z	-
dc.date.issued	2007	en_US
dc.identifier.isbn	978-1-4244-3590-6	en_US
dc.identifier.uri	http://hdl.handle.net/11536/10800	-
dc.description.abstract	We report the characteristics of a GaN high-Q micro-cavity light-emitting diode (MCLED). The GaN MCLED showed a very narrow linewidth of 0,52 nm at 10 mA and a dominant emission peak wavelength at 465.3 nm. (C)2007 Optical Society of America	en_US
dc.language.iso	en_US	en_US
dc.title	The Characteristics of a High-Q GaN Micro-cavity Light Emitting Diodes	en_US
dc.type	Proceedings Paper	en_US
dc.identifier.journal	2007 CONFERENCE ON LASERS & ELECTRO-OPTICS/QUANTUM ELECTRONICS AND LASER SCIENCE CONFERENCE (CLEO/QELS 2007), VOLS 1-5	en_US
dc.citation.spage	65	en_US
dc.citation.epage	66	en_US
dc.contributor.department	光電工程學系	zh_TW
dc.contributor.department	Department of Photonics	en_US
dc.identifier.wosnumber	WOS:000268751000033	-
顯示於類別：	會議論文