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dc.contributor.authorWang, M. C.en_US
dc.contributor.authorChang, T. C.en_US
dc.contributor.authorLiu, Po-Tsunen_US
dc.contributor.authorTsao, S. W.en_US
dc.contributor.authorChen, J. R.en_US
dc.date.accessioned2014-12-08T15:14:03Z-
dc.date.available2014-12-08T15:14:03Z-
dc.date.issued2007-05-07en_US
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.2738192en_US
dc.identifier.urihttp://hdl.handle.net/11536/10807-
dc.description.abstractThe photo-leakage-current (I-PLC) characteristic of F incorporated a-Si:H thin film transistor (TFT) has been studied. The device activation energy (E-a) of a-Si:H(:F) TFTs is higher than those of typical a-Si:H TFTs, and resulted in the shift down of Fermi level in a-Si:H(:F). Experimental results show that the I-PLC of a-Si:H(:F) TFTs is smaller than that of conventional a-Si:H TFTs in the density of states limited region, stemmed from the higher recombination centers present in a-Si:H(:F) material. However, the higher I-PLC is observed in the hole conduction region, resulted from the larger E-a in the a-Si:H(:F) TFTs. (C) 2007 American Institute of Physics.en_US
dc.language.isoen_USen_US
dc.titlePhoto-leakage-current characteristic of F incorporated hydrogenated amorphous silicon thin film transistoren_US
dc.typeArticleen_US
dc.identifier.doi10.1063/1.2738192en_US
dc.identifier.journalAPPLIED PHYSICS LETTERSen_US
dc.citation.volume90en_US
dc.citation.issue19en_US
dc.citation.epageen_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.department顯示科技研究所zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.contributor.departmentInstitute of Displayen_US
dc.identifier.wosnumberWOS:000246413400047-
dc.citation.woscount3-
Appears in Collections:Articles


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