標題: | Small angle x-ray scattering measurements of lithographic patterns with sidewall roughness from vertical standing waves |
作者: | Wang, Chengqing Jones, Ronald L. Lin, Eric K. Wu, Wen-Li Leu, Jim 材料科學與工程學系 Department of Materials Science and Engineering |
公開日期: | 7-May-2007 |
摘要: | Small angle x-ray scattering (SAXS) measurements are used to quantify the wavelength and amplitude of the sidewall roughness in a lithographic line:space pattern due to vertical standing waves present during the photoresist exposure. Analytic equations are derived to model the x-ray scattering intensity and are used to determine the periodicity and amplitude of the standing wave roughness. The average periodicity, or pitch, and the linewidth were L=422 +/- 1 nm and w(0)=148 +/- 1 nm. The period and amplitude of the standing wave roughness were lambda(s)=65 +/- 1 nm and A(s)=3.0 +/- 0.5 nm. These results demonstrate the potential of SAXS measurements to quantify nondestructively and quantitatively dimensional deviations from an ideal structure. (C) 2007 American Institute of Physics. |
URI: | http://dx.doi.org/10.1063/1.2737399 http://hdl.handle.net/11536/10812 |
ISSN: | 0003-6951 |
DOI: | 10.1063/1.2737399 |
期刊: | APPLIED PHYSICS LETTERS |
Volume: | 90 |
Issue: | 19 |
結束頁: | |
Appears in Collections: | Articles |
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