標題: Small angle x-ray scattering measurements of lithographic patterns with sidewall roughness from vertical standing waves
作者: Wang, Chengqing
Jones, Ronald L.
Lin, Eric K.
Wu, Wen-Li
Leu, Jim
材料科學與工程學系
Department of Materials Science and Engineering
公開日期: 7-May-2007
摘要: Small angle x-ray scattering (SAXS) measurements are used to quantify the wavelength and amplitude of the sidewall roughness in a lithographic line:space pattern due to vertical standing waves present during the photoresist exposure. Analytic equations are derived to model the x-ray scattering intensity and are used to determine the periodicity and amplitude of the standing wave roughness. The average periodicity, or pitch, and the linewidth were L=422 +/- 1 nm and w(0)=148 +/- 1 nm. The period and amplitude of the standing wave roughness were lambda(s)=65 +/- 1 nm and A(s)=3.0 +/- 0.5 nm. These results demonstrate the potential of SAXS measurements to quantify nondestructively and quantitatively dimensional deviations from an ideal structure. (C) 2007 American Institute of Physics.
URI: http://dx.doi.org/10.1063/1.2737399
http://hdl.handle.net/11536/10812
ISSN: 0003-6951
DOI: 10.1063/1.2737399
期刊: APPLIED PHYSICS LETTERS
Volume: 90
Issue: 19
結束頁: 
Appears in Collections:Articles


Files in This Item:

  1. 000246413400087.pdf

If it is a zip file, please download the file and unzip it, then open index.html in a browser to view the full text content.