完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Wang, Chengqing | en_US |
dc.contributor.author | Jones, Ronald L. | en_US |
dc.contributor.author | Lin, Eric K. | en_US |
dc.contributor.author | Wu, Wen-Li | en_US |
dc.contributor.author | Leu, Jim | en_US |
dc.date.accessioned | 2014-12-08T15:14:04Z | - |
dc.date.available | 2014-12-08T15:14:04Z | - |
dc.date.issued | 2007-05-07 | en_US |
dc.identifier.issn | 0003-6951 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1063/1.2737399 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/10812 | - |
dc.description.abstract | Small angle x-ray scattering (SAXS) measurements are used to quantify the wavelength and amplitude of the sidewall roughness in a lithographic line:space pattern due to vertical standing waves present during the photoresist exposure. Analytic equations are derived to model the x-ray scattering intensity and are used to determine the periodicity and amplitude of the standing wave roughness. The average periodicity, or pitch, and the linewidth were L=422 +/- 1 nm and w(0)=148 +/- 1 nm. The period and amplitude of the standing wave roughness were lambda(s)=65 +/- 1 nm and A(s)=3.0 +/- 0.5 nm. These results demonstrate the potential of SAXS measurements to quantify nondestructively and quantitatively dimensional deviations from an ideal structure. (C) 2007 American Institute of Physics. | en_US |
dc.language.iso | en_US | en_US |
dc.title | Small angle x-ray scattering measurements of lithographic patterns with sidewall roughness from vertical standing waves | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1063/1.2737399 | en_US |
dc.identifier.journal | APPLIED PHYSICS LETTERS | en_US |
dc.citation.volume | 90 | en_US |
dc.citation.issue | 19 | en_US |
dc.citation.epage | en_US | |
dc.contributor.department | 材料科學與工程學系 | zh_TW |
dc.contributor.department | Department of Materials Science and Engineering | en_US |
dc.identifier.wosnumber | WOS:000246413400087 | - |
dc.citation.woscount | 13 | - |
顯示於類別: | 期刊論文 |