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dc.contributor.authorWang, Chengqingen_US
dc.contributor.authorJones, Ronald L.en_US
dc.contributor.authorLin, Eric K.en_US
dc.contributor.authorWu, Wen-Lien_US
dc.contributor.authorLeu, Jimen_US
dc.date.accessioned2014-12-08T15:14:04Z-
dc.date.available2014-12-08T15:14:04Z-
dc.date.issued2007-05-07en_US
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.2737399en_US
dc.identifier.urihttp://hdl.handle.net/11536/10812-
dc.description.abstractSmall angle x-ray scattering (SAXS) measurements are used to quantify the wavelength and amplitude of the sidewall roughness in a lithographic line:space pattern due to vertical standing waves present during the photoresist exposure. Analytic equations are derived to model the x-ray scattering intensity and are used to determine the periodicity and amplitude of the standing wave roughness. The average periodicity, or pitch, and the linewidth were L=422 +/- 1 nm and w(0)=148 +/- 1 nm. The period and amplitude of the standing wave roughness were lambda(s)=65 +/- 1 nm and A(s)=3.0 +/- 0.5 nm. These results demonstrate the potential of SAXS measurements to quantify nondestructively and quantitatively dimensional deviations from an ideal structure. (C) 2007 American Institute of Physics.en_US
dc.language.isoen_USen_US
dc.titleSmall angle x-ray scattering measurements of lithographic patterns with sidewall roughness from vertical standing wavesen_US
dc.typeArticleen_US
dc.identifier.doi10.1063/1.2737399en_US
dc.identifier.journalAPPLIED PHYSICS LETTERSen_US
dc.citation.volume90en_US
dc.citation.issue19en_US
dc.citation.epageen_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000246413400087-
dc.citation.woscount13-
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