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dc.contributor.authorYang, Hung-Pin D.en_US
dc.contributor.authorLiu, Jui-Nungen_US
dc.contributor.authorLai, Fang-Ien_US
dc.contributor.authorKuo, Hao-Chungen_US
dc.contributor.authorChi, Jim Y.en_US
dc.date.accessioned2014-12-08T15:14:08Z-
dc.date.available2014-12-08T15:14:08Z-
dc.date.issued2007-05-01en_US
dc.identifier.issn0021-4922en_US
dc.identifier.urihttp://dx.doi.org/10.1143/JJAP.46.2941en_US
dc.identifier.urihttp://hdl.handle.net/11536/10836-
dc.description.abstractA small-aperture oxide-confined holey light-emitting diode (LED) on p-type GaAs substrate in the 830 nm range is reported. The device is consisted of bottom distributed Bragg reflector (DBR), quantum wells (QWs), and top DBR, with a small-aperture holey structure at the center for light extraction. The internally reflected spontaneous emission can be extracted and collimated out of the etched hole. High-resolution imaging studies indicate that the device emits with a narrower beam mainly through the central etched hole region made it suitable for fiber-optic applications.en_US
dc.language.isoen_USen_US
dc.subjectlight-emitting diode (LED)en_US
dc.subjectp-substrateen_US
dc.subjectholeyen_US
dc.titleCharacteristics of P-substrate small-aperture holey light-emitting diodes for fiber-optic applicationsen_US
dc.typeArticleen_US
dc.identifier.doi10.1143/JJAP.46.2941en_US
dc.identifier.journalJAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERSen_US
dc.citation.volume46en_US
dc.citation.issue5Aen_US
dc.citation.spage2941en_US
dc.citation.epage2943en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000246781100027-
dc.citation.woscount1-
Appears in Collections:Articles


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