Characteristics of P-substrate small-aperture holey light-emitting diodes for fiber-optic applications

doi:10.1143/JJAP.46.2941

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Yang, Hung-Pin D.	en_US
dc.contributor.author	Liu, Jui-Nung	en_US
dc.contributor.author	Lai, Fang-I	en_US
dc.contributor.author	Kuo, Hao-Chung	en_US
dc.contributor.author	Chi, Jim Y.	en_US
dc.date.accessioned	2014-12-08T15:14:08Z	-
dc.date.available	2014-12-08T15:14:08Z	-
dc.date.issued	2007-05-01	en_US
dc.identifier.issn	0021-4922	en_US
dc.identifier.uri	http://dx.doi.org/10.1143/JJAP.46.2941	en_US
dc.identifier.uri	http://hdl.handle.net/11536/10836	-
dc.description.abstract	A small-aperture oxide-confined holey light-emitting diode (LED) on p-type GaAs substrate in the 830 nm range is reported. The device is consisted of bottom distributed Bragg reflector (DBR), quantum wells (QWs), and top DBR, with a small-aperture holey structure at the center for light extraction. The internally reflected spontaneous emission can be extracted and collimated out of the etched hole. High-resolution imaging studies indicate that the device emits with a narrower beam mainly through the central etched hole region made it suitable for fiber-optic applications.	en_US
dc.language.iso	en_US	en_US
dc.subject	light-emitting diode (LED)	en_US
dc.subject	p-substrate	en_US
dc.subject	holey	en_US
dc.title	Characteristics of P-substrate small-aperture holey light-emitting diodes for fiber-optic applications	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1143/JJAP.46.2941	en_US
dc.identifier.journal	JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS	en_US
dc.citation.volume	46	en_US
dc.citation.issue	5A	en_US
dc.citation.spage	2941	en_US
dc.citation.epage	2943	en_US
dc.contributor.department	光電工程學系	zh_TW
dc.contributor.department	Department of Photonics	en_US
dc.identifier.wosnumber	WOS:000246781100027	-
dc.citation.woscount	1	-
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