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dc.contributor.authorLin, HYen_US
dc.contributor.authorLei, TFen_US
dc.contributor.authorJeng, JJen_US
dc.contributor.authorPan, CLen_US
dc.contributor.authorChang, CYen_US
dc.date.accessioned2014-12-08T15:02:24Z-
dc.date.available2014-12-08T15:02:24Z-
dc.date.issued1996-09-01en_US
dc.identifier.issn0924-4247en_US
dc.identifier.urihttp://dx.doi.org/10.1016/S0924-4247(96)01323-4en_US
dc.identifier.urihttp://hdl.handle.net/11536/1083-
dc.description.abstractA three-dimensional silicon magnetic transducer with symmetric sensitivities in the x-, y- and z-directions and small cross sensitivity has been demonstrated. Devices are based on a design of a vertical Hall structure using the surrounding trench and symmetric design to suppress the cross sensitivity. The fabrication process is simple and can be used as a part of a standard integrated circuit process. The results show that almost equal sensitivities in all three components of magnetic field can be obtained by coating Ni/Co thin films on the backside of the substrates. The cross sensitivity is only 1.3% of the sensitivity.en_US
dc.language.isoen_USen_US
dc.subjectmagnetic transducersen_US
dc.subjectsiliconen_US
dc.subjectsymmetric sensitivityen_US
dc.titleA novel structure for three-dimensional silicon magnetic transducers to improve the sensitivity symmetryen_US
dc.typeArticleen_US
dc.identifier.doi10.1016/S0924-4247(96)01323-4en_US
dc.identifier.journalSENSORS AND ACTUATORS A-PHYSICALen_US
dc.citation.volume56en_US
dc.citation.issue3en_US
dc.citation.spage233en_US
dc.citation.epage237en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
Appears in Collections:Articles


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