Ka-band 0.18 mu m CMOS low noise amplifier with 5.2 dB noise figure

doi:10.1002/mop.22383

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Chang, Win-Ming	en_US
dc.contributor.author	Hsiung, Zi-Hao	en_US
dc.contributor.author	Jou, Christina F.	en_US
dc.date.accessioned	2014-12-08T15:14:11Z	-
dc.date.available	2014-12-08T15:14:11Z	-
dc.date.issued	2007-05-01	en_US
dc.identifier.issn	0895-2477	en_US
dc.identifier.uri	http://dx.doi.org/10.1002/mop.22383	en_US
dc.identifier.uri	http://hdl.handle.net/11536/10861	-
dc.description.abstract	A Ka-band low noise amplifier (LNA) using three cascaded stages was designed and implemented in a standard 0.18 Pun CMOS technology. The fabricated Ka-band LNA achieves power gain (S21) above 12 dB from 30 to 32 GHz and a minimal noise figure of 5.2 dB at 31.5 GHz. The three cascaded stages LNA consume 15.58 mA from I V power supply. Compared with the recent published literatures, this LNA operates at the highest frequency ever reported by standard bulk 0.18 mu m CMOS process. (c) 2007 Wiley Periodicals, Inc.	en_US
dc.language.iso	en_US	en_US
dc.subject	Ka-band	en_US
dc.subject	LNA	en_US
dc.subject	CMOS	en_US
dc.title	Ka-band 0.18 mu m CMOS low noise amplifier with 5.2 dB noise figure	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1002/mop.22383	en_US
dc.identifier.journal	MICROWAVE AND OPTICAL TECHNOLOGY LETTERS	en_US
dc.citation.volume	49	en_US
dc.citation.issue	5	en_US
dc.citation.spage	1187	en_US
dc.citation.epage	1189	en_US
dc.contributor.department	電信工程研究所	zh_TW
dc.contributor.department	Institute of Communications Engineering	en_US
dc.identifier.wosnumber	WOS:000245815200062	-
dc.citation.woscount	2	-
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