Dichromatic InGaN-based white light emitting diodes by using laser lift-off and wafer-bonding schemes

Abstract

An InGaN-based dual-wavelength blue/green (470 nm/550 nm) light emitting diode (LED) with three terminal operations has been designed and fabricated by using sapphire laser lift-off and wafer-bonding schemes. The device is equivalent to a parallel connection of blue and green LEDs; thus the effective electrical resistance of the device could be reduced. The luminous efficiency is 40 lm/W at 20 mA, accompanied by a broad electroluminescence emission with a combination of blue and green colors. This monolithically integrated dichromatic lighting structure has great potential in the application of the solid-state lighting. (c) 2007 American Institute of Physics.