Nanogap formation by palladium hydrogenation for surface conduction electron emitters fabrication

doi:10.1063/1.2728761

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Tsai, Chih-Hao	en_US
dc.contributor.author	Pan, Fu-Ming	en_US
dc.contributor.author	Chen, Kuan-Jung	en_US
dc.contributor.author	Wei, Cheng-Yang	en_US
dc.contributor.author	Liu, Mei	en_US
dc.contributor.author	Mo, Chi-Neng	en_US
dc.date.accessioned	2014-12-08T15:14:15Z	-
dc.date.available	2014-12-08T15:14:15Z	-
dc.date.issued	2007-04-16	en_US
dc.identifier.issn	0003-6951	en_US
dc.identifier.uri	http://dx.doi.org/10.1063/1.2728761	en_US
dc.identifier.uri	http://hdl.handle.net/11536/10898	-
dc.description.abstract	Nanometer-scale gaps in Pd strips are obtained by hydrogen absorption under high pressure treatment. The resulting lattice constant increase due to the Pd phase transformation after hydrogen uptake results in a large compressive stress on the thin Pd films. Under proper geometric arrangement of the Pd electrode within a surface conduction electron (SCE) emitter structure, a single nanogap per SCE device is obtained. A turn-on voltage of 41 V is observed for emitters with a 25 nm gap. (c) 2007 American Institute of Physics.	en_US
dc.language.iso	en_US	en_US
dc.title	Nanogap formation by palladium hydrogenation for surface conduction electron emitters fabrication	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1063/1.2728761	en_US
dc.identifier.journal	APPLIED PHYSICS LETTERS	en_US
dc.citation.volume	90	en_US
dc.citation.issue	16	en_US
dc.citation.epage		en_US
dc.contributor.department	材料科學與工程學系	zh_TW
dc.contributor.department	Department of Materials Science and Engineering	en_US
dc.identifier.wosnumber	WOS:000245870400107	-
dc.citation.woscount	11	-
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