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dc.contributor.authorCheng, Hui-Wenen_US
dc.contributor.authorLi, Yimingen_US
dc.date.accessioned2014-12-08T15:14:15Z-
dc.date.available2014-12-08T15:14:15Z-
dc.date.issued2010-05-01en_US
dc.identifier.issn0026-2714en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.microrel.2010.01.011en_US
dc.identifier.urihttp://hdl.handle.net/11536/10899-
dc.description.abstractIn this work, a novel nanogap with inclined protrusion cathode in palladium strip fabricated by hydrogen absorption under high-pressure treatment is optimized for the surface conduction electron-emitter. Its field emission is sensitive to the geometry of surface conduction electron-emitters (SCE). For a specified emitter material, the SCE are further investigated by varying the thickness, tilted angle and gap of palladium (Pd). An optimal field emission efficiency with 80 degrees tilted angle, 120 nm gap and 10 nm thickness of Pd is found for certain designed field emission efficiency. We further find that varying the emitter material work function of the emitter material from 5.12 eV to 3.9 eV will further improve the field emission property due to the increase of the emitted current. (C) 2010 Elsevier Ltd. All rights reserved.en_US
dc.language.isoen_USen_US
dc.titleOptimization on configuration of surface conduction electron-emittersen_US
dc.typeArticle; Proceedings Paperen_US
dc.identifier.doi10.1016/j.microrel.2010.01.011en_US
dc.identifier.journalMICROELECTRONICS RELIABILITYen_US
dc.citation.volume50en_US
dc.citation.issue5en_US
dc.citation.spage699en_US
dc.citation.epage703en_US
dc.contributor.department傳播研究所zh_TW
dc.contributor.department電機工程學系zh_TW
dc.contributor.departmentInstitute of Communication Studiesen_US
dc.contributor.departmentDepartment of Electrical and Computer Engineeringen_US
dc.identifier.wosnumberWOS:000278728700029-
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