完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Cheng, Shiau-Shin | en_US |
dc.contributor.author | Yang, Chuan-Yi | en_US |
dc.contributor.author | Chuang, You-Che | en_US |
dc.contributor.author | Ou, Chun-Wei | en_US |
dc.contributor.author | Wu, Meng-Chyi | en_US |
dc.contributor.author | Lin, Shih-Yen | en_US |
dc.contributor.author | Chan, Yi-Jen | en_US |
dc.date.accessioned | 2014-12-08T15:14:17Z | - |
dc.date.available | 2014-12-08T15:14:17Z | - |
dc.date.issued | 2007-04-09 | en_US |
dc.identifier.issn | 0003-6951 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1063/1.2722623 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/10919 | - |
dc.description.abstract | In this letter, the characteristics of vertical organic triodes fabricated by using two copper phthalocyanine (CuPc) back-to-back Schottky diodes with different metal base thicknesses are reported. The vertical organic triodes exhibit pronounced saturation regions in the output current-voltage characteristics. The common-emitter current gain reduces with increasing the Al base thickness due to the increase of recombination current at the base end resulted from the reduction of opening voids in the Al metal film. The common-emitter current gain of the device with 4.5 nm thick Al base reaches 1.9 at V-CE=-6 V and J(B)=2.5 mA/cm(2). (c) 2007 American Institute of Physics. | en_US |
dc.language.iso | en_US | en_US |
dc.title | Influence of thin metal base thickness on the performance of CuPc vertical organic triodes | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1063/1.2722623 | en_US |
dc.identifier.journal | APPLIED PHYSICS LETTERS | en_US |
dc.citation.volume | 90 | en_US |
dc.citation.issue | 15 | en_US |
dc.citation.epage | en_US | |
dc.contributor.department | 光電工程學系 | zh_TW |
dc.contributor.department | Department of Photonics | en_US |
dc.identifier.wosnumber | WOS:000245690700112 | - |
dc.citation.woscount | 14 | - |
顯示於類別: | 期刊論文 |