Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Yang, Ching-Jung | en_US |
dc.contributor.author | Chen, Chili | en_US |
dc.contributor.author | Wu, Pu-Wei | en_US |
dc.contributor.author | Shieh, Jia-Min | en_US |
dc.contributor.author | Wang, Shun-Min | en_US |
dc.contributor.author | Liang, Shih-Wei | en_US |
dc.date.accessioned | 2014-12-08T15:14:23Z | - |
dc.date.available | 2014-12-08T15:14:23Z | - |
dc.date.issued | 2007-04-01 | en_US |
dc.identifier.issn | 0884-2914 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1557/jmr.2007.0143 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/10976 | - |
dc.description.abstract | Ordered arrays of Ta(2)O(5) nanodots were prepared using anodic aluminum oxide (AAO) as a template to support localized oxidation of TaN. Films of TaN (50 nm) and Al (1.5 mu m) were deposited successively on p-type Si wafers and followed by a two-step anodization process at 40 V using oxalic acid as the electrolyte. The first anodization promoted growth of irregular AAO from overlying Al film. After chemical etching, the second anodization was performed to develop well-organized AAO channels and initiate oxidation of underlying TaN film to form tantalum oxide nanodots at the AAO pore bottoms. X-ray photoelectron spectroscopy results confirmed the chemical nature of nanodots as stoichmetric Ta(2)O(5), X-ray diffraction demonstrated the amorphous characteristic of Ta(2)O(5). As shown in field-emission scanning electron microscopy and transmission electron results, the Ta(2)O(5) nanodots exhibited a hillock structure 80 nm in diameter at the bottom and 50 nm in height. We also synthesized 30-nm nanodots by adjusting AAO formation electrochemistry. This demonstrates the general applicability of the AAO template method for nanodot synthesis from nitride to oxide at a desirable size. | en_US |
dc.language.iso | en_US | en_US |
dc.title | Fabrication of ordered Ta(2)O(5) nanodots using an anodic aluminum oxide template on Si substrate | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1557/jmr.2007.0143 | en_US |
dc.identifier.journal | JOURNAL OF MATERIALS RESEARCH | en_US |
dc.citation.volume | 22 | en_US |
dc.citation.issue | 4 | en_US |
dc.citation.spage | 1064 | en_US |
dc.citation.epage | 1071 | en_US |
dc.contributor.department | 材料科學與工程學系 | zh_TW |
dc.contributor.department | Department of Materials Science and Engineering | en_US |
dc.identifier.wosnumber | WOS:000245489400032 | - |
dc.citation.woscount | 4 | - |
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