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dc.contributor.authorHo, Chia-Chengen_US
dc.contributor.authorChiou, Bi-Shiouen_US
dc.contributor.authorChang, Li-Chunen_US
dc.date.accessioned2014-12-08T15:14:27Z-
dc.date.available2014-12-08T15:14:27Z-
dc.date.issued2007-03-26en_US
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.2717553en_US
dc.identifier.urihttp://hdl.handle.net/11536/11005-
dc.description.abstractA multilayer Ba0.7Sr0.3TiO3/Cr/Ba0.7Sr0.3TiO3 (BST/Cr/BST) structure was sputtered sequentially onto Pt/Ti/SiO2/Si substrate. With the insertion of a 2 nm Cr interlayer, the temperature coefficient of capacitance of the BST/Cr/BST dielectric is about 69% lower than that of BST monolayer dielectric. The dielectric constant and dissipation factor as the function of Cr thickness are studied. X-ray diffraction patterns, the analysis results of energy dispersive spectroscopy, and the survey scan profiles of Auger electron spectroscopy reveal the formation of a TiO2 secondary phase after the multilayer is annealed at 800 degrees C in O-2 atmosphere. The insertion of nano-Cr interlayer improves the electrical properties of BST capacitors. (c) 2007 American Institute of Physics.en_US
dc.language.isoen_USen_US
dc.titleThickness effects on the electrical characteristics of Ba0.7Sr0.3TiO3 capacitors with nano-Cr interlayeren_US
dc.typeArticleen_US
dc.identifier.doi10.1063/1.2717553en_US
dc.identifier.journalAPPLIED PHYSICS LETTERSen_US
dc.citation.volume90en_US
dc.citation.issue13en_US
dc.citation.epageen_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentInnovative Packaging Research Centerzh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.contributor.departmentInnovative Packaging Research Centeren_US
dc.identifier.wosnumberWOS:000245317100077-
dc.citation.woscount7-
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