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dc.contributor.authorChang, Kow-Mingen_US
dc.contributor.authorLin, Ren-Jieen_US
dc.contributor.authorDeng, I-Chungen_US
dc.date.accessioned2014-12-08T15:14:29Z-
dc.date.available2014-12-08T15:14:29Z-
dc.date.issued2007-03-15en_US
dc.identifier.issn0924-4247en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.sna.2006.02.053en_US
dc.identifier.urihttp://hdl.handle.net/11536/11028-
dc.description.abstractIn the surface micromachining technique, residual stress and sticking effect play an important role in determining whether a microstructure is suspended or collapse during a release process. In this paper, we propose a simpler method for making suspended membranes for thermally isolated application by using cheap processing steps and compatible with CMOS-process; also, there are some simulations done to predict stiction as function of the anchor profile. It is demonstrated by fabricating the test structures of CMOS-process compatible surface micromachined bolometer using aluminum sacrificial layer with high yield and high throughput. The aluminum sacrificial layer provides some benefits including rapid wet-etching and high wet-etching selectivity with respect to dielectric materials. The residual stress and gravity of the microstructures are evaluated with structural simulations, and the sticking effect can be alleviated by an appropriate structure design and a release process. Once the residual stress is known, we can successfully use Coventorware simulations to predict a suspended membrane by controlling the anchor profile which contains sidewall conformal factor and sidewall angle. The simulation results are in good agreement with the experiments. (c) 2006 Elsevier B.V. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectsacrificial layeren_US
dc.subjectresidual stressen_US
dc.subjectsticking effecten_US
dc.subjectsurface micromachiningen_US
dc.subjectanchor profileen_US
dc.titleDesign of low-temperature CMOS-process compatible membrane fabricated with sacrificial aluminum layer for thermally isolated applicationsen_US
dc.typeArticleen_US
dc.identifier.doi10.1016/j.sna.2006.02.053en_US
dc.identifier.journalSENSORS AND ACTUATORS A-PHYSICALen_US
dc.citation.volume134en_US
dc.citation.issue2en_US
dc.citation.spage660en_US
dc.citation.epage667en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000245319900048-
dc.citation.woscount5-
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