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dc.contributor.authorLin, Kun-Linen_US
dc.contributor.authorLin, Chien-Chengen_US
dc.date.accessioned2014-12-08T15:14:30Z-
dc.date.available2014-12-08T15:14:30Z-
dc.date.issued2007-03-01en_US
dc.identifier.issn0002-7820en_US
dc.identifier.urihttp://dx.doi.org/10.1111/j.1551-2916.2006.01352.xen_US
dc.identifier.urihttp://hdl.handle.net/11536/11032-
dc.description.abstractThe interfacial reaction layers in the Ti/ZrO2 diffusion couples, isothermally annealed in argon at temperatures ranging from 1100 degrees to 1550 degrees C for 6 h, were characterized using scanning electron microscopy and transmission electron microscopy, both attached with an energy-dispersive spectrometer. Very limited reaction occurred between Ti and ZrO2 at 1100 degrees C. A beta'-Ti(Zr, O) layer and a two-phase alpha-Ti(O)+beta'-Ti(Zr, O) layer were found in the titanium side after annealing at T >= 1300 degrees C and T >= 1400 degrees C, respectively. A three-phase layer, consisting of Ti2ZrO+alpha-Ti(O, Zr)+beta'-Ti (O, Zr), was formed after annealing at 1550 degrees C. In the zirconia side near the original interface, beta'-Ti coexisted with fine spherical c-ZrO2-x, which dissolved a significant amount of Y2O3 in solid solution at T >= 1300 degrees C. Further into the ceramic side, the alpha-Zr was formed due to the exsolution of Zr out of the metastable ZrO2-x after annealing at T >= 1300 degrees C: the alpha-Zr was very fine and dense at 1300 degrees C, continuously distributed along grain boundaries at 1400 degrees C, and became coarsened at 1550 degrees C. Zirconia grains grew significantly at T >= 1400 degrees C, with the lenticular t-ZrO2-x being precipitated in c-ZrO2-x. Finally, the microstructural development and diffusion paths in the Ti/ZrO2 diffusion couples annealed at various temperatures were also described with the aid of the Ti-Zr-O ternary phase diagram.en_US
dc.language.isoen_USen_US
dc.titleEffects of annealing temperature on microstructural development at the interface between zirconia and titaniumen_US
dc.typeArticleen_US
dc.identifier.doi10.1111/j.1551-2916.2006.01352.xen_US
dc.identifier.journalJOURNAL OF THE AMERICAN CERAMIC SOCIETYen_US
dc.citation.volume90en_US
dc.citation.issue3en_US
dc.citation.spage893en_US
dc.citation.epage899en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000244720100035-
dc.citation.woscount6-
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