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dc.contributor.authorHuang, Chihpinen_US
dc.contributor.authorPan, Jill R.en_US
dc.contributor.authorLee, Maosungen_US
dc.contributor.authorYen, Shihmingen_US
dc.date.accessioned2014-12-08T15:14:30Z-
dc.date.available2014-12-08T15:14:30Z-
dc.date.issued2007-03-01en_US
dc.identifier.issn0268-2575en_US
dc.identifier.urihttp://dx.doi.org/10.1002/jctb.1671en_US
dc.identifier.urihttp://hdl.handle.net/11536/11036-
dc.description.abstractGallium arsenide technology has been widely applied in the communication and optical electronics industries. The process of chip manufacturing produces a stream of wastewater unique in its low flow rate and high arsenic concentration. Fluidized bed crystallization (FBC) technology combines the advantages of a fluidized bed reactor and crystallization. It is highly efficient with low capital and operational costs, while producing no sludge. The waste from the FBC is small in volume, high in crystal purity and recyclable. Jar tests were first performed to evaluate the precipitation of arsenic sulfide. Then a lab-scale fluidized bed reactor was applied to screen critical operational parameters and the process was optimized to meet the wastewater discharge standard. The results obtained in this study confirmed that the FBC process is capable of treating wastewater containing high concentrations of arsenic, reducing the concentration to mu g L-1 levels. Sulfide dosage and operating pH are the two most significant parameters determining the residual arsenic concentration of the effluent, with optimum conditions of pH = 2 and S/As = 2.2 to meet the local discharge limit. (c) 2007 Society of Chemical Industryen_US
dc.language.isoen_USen_US
dc.subjectarsenicen_US
dc.subjectarsenic sulfideen_US
dc.subjectfluidized bed crystallizationen_US
dc.subjectGaAs wastewateren_US
dc.titleTreatment of high-level arsenic-containing wastewater by fluidized bed crystallization processen_US
dc.typeArticleen_US
dc.identifier.doi10.1002/jctb.1671en_US
dc.identifier.journalJOURNAL OF CHEMICAL TECHNOLOGY AND BIOTECHNOLOGYen_US
dc.citation.volume82en_US
dc.citation.issue3en_US
dc.citation.spage289en_US
dc.citation.epage294en_US
dc.contributor.department環境工程研究所zh_TW
dc.contributor.departmentInstitute of Environmental Engineeringen_US
dc.identifier.wosnumberWOS:000245394300010-
dc.citation.woscount5-
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