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dc.contributor.authorHsieh, L. C.en_US
dc.contributor.authorHuang, Y. W.en_US
dc.contributor.authorHan, X. F.en_US
dc.contributor.authorZeng, Z. M.en_US
dc.contributor.authorChien, W. C.en_US
dc.contributor.authorPeng, T. Y.en_US
dc.contributor.authorLo, C. K.en_US
dc.contributor.authorYao, Y. D.en_US
dc.date.accessioned2014-12-08T15:14:33Z-
dc.date.available2014-12-08T15:14:33Z-
dc.date.issued2007-03-01en_US
dc.identifier.issn0304-8853en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.jmmm.2006.10.1097en_US
dc.identifier.urihttp://hdl.handle.net/11536/11065-
dc.description.abstractThe magnetoimpedance effect of magnetic tunnel junction ( MTJ) was investigated at room temperature in the frequency ranged from 100 Hz to 15 MHz. The MR loop with a ratio of 9.49% at 5MHz switches to - 11.51% at 7 MHz, respectively. This indicates the MR loop reverse shape and sign around 6 MHz. This inverse MR effect is explained by the impedance competition among Resistor- Inductor series circuit and Capacitor part. (c) 2006 Elsevier B. V. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectMTJen_US
dc.subjectinverseen_US
dc.subjectimpedanceen_US
dc.titleHigh frequency impedance inverse in MTJ junctionen_US
dc.typeArticleen_US
dc.identifier.doi10.1016/j.jmmm.2006.10.1097en_US
dc.identifier.journalJOURNAL OF MAGNETISM AND MAGNETIC MATERIALSen_US
dc.citation.volume310en_US
dc.citation.issue2en_US
dc.citation.spage1903en_US
dc.citation.epage1904en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000247720400007-
dc.citation.woscount0-
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