High frequency impedance inverse in MTJ junction

doi:10.1016/j.jmmm.2006.10.1097

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Hsieh, L. C.	en_US
dc.contributor.author	Huang, Y. W.	en_US
dc.contributor.author	Han, X. F.	en_US
dc.contributor.author	Zeng, Z. M.	en_US
dc.contributor.author	Chien, W. C.	en_US
dc.contributor.author	Peng, T. Y.	en_US
dc.contributor.author	Lo, C. K.	en_US
dc.contributor.author	Yao, Y. D.	en_US
dc.date.accessioned	2014-12-08T15:14:33Z	-
dc.date.available	2014-12-08T15:14:33Z	-
dc.date.issued	2007-03-01	en_US
dc.identifier.issn	0304-8853	en_US
dc.identifier.uri	http://dx.doi.org/10.1016/j.jmmm.2006.10.1097	en_US
dc.identifier.uri	http://hdl.handle.net/11536/11065	-
dc.description.abstract	The magnetoimpedance effect of magnetic tunnel junction ( MTJ) was investigated at room temperature in the frequency ranged from 100 Hz to 15 MHz. The MR loop with a ratio of 9.49% at 5MHz switches to - 11.51% at 7 MHz, respectively. This indicates the MR loop reverse shape and sign around 6 MHz. This inverse MR effect is explained by the impedance competition among Resistor- Inductor series circuit and Capacitor part. (c) 2006 Elsevier B. V. All rights reserved.	en_US
dc.language.iso	en_US	en_US
dc.subject	MTJ	en_US
dc.subject	inverse	en_US
dc.subject	impedance	en_US
dc.title	High frequency impedance inverse in MTJ junction	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1016/j.jmmm.2006.10.1097	en_US
dc.identifier.journal	JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS	en_US
dc.citation.volume	310	en_US
dc.citation.issue	2	en_US
dc.citation.spage	1903	en_US
dc.citation.epage	1904	en_US
dc.contributor.department	材料科學與工程學系	zh_TW
dc.contributor.department	Department of Materials Science and Engineering	en_US
dc.identifier.wosnumber	WOS:000247720400007	-
dc.citation.woscount	0	-
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