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dc.contributor.authorTu, K. N.en_US
dc.contributor.authorChen, Chihen_US
dc.contributor.authorWu, Albert T.en_US
dc.date.accessioned2014-12-08T15:14:37Z-
dc.date.available2014-12-08T15:14:37Z-
dc.date.issued2007-03-01en_US
dc.identifier.issn0957-4522en_US
dc.identifier.urihttp://dx.doi.org/10.1007/s10854-006-9029-zen_US
dc.identifier.urihttp://hdl.handle.net/11536/11083-
dc.description.abstractSpontaneous Sn whisker growth is a surface relief phenomenon of creep, driven by a compressive stress gradient. No externally applied stress is required for the growth, and the compressive stress is generated within, from the chemical reaction between Sn and Cu to form the intermetallic compound Cu6Sn5 at room temperature. To obtain the compressive stress gradient, a break of the protective oxide on the Sn surface is required because the free surface of the break is stress-free. Thus, spontaneous Sn whisker growth is unique that stress relaxation accompanies stress generation. One of the whisker challenging issues in understanding and in finding effective methods to prevent spontaneous Sn whisker growth is to develop accelerated tests of whisker growth. Use of electromigration on short Sn stripes can facilitate this. The stress distribution around the vicinity and the root of a whisker can be obtained by using the micro-beam X-ray diffraction utilizing synchrotron radiation. A discussion of how to prevent spontaneous Sn whisker growth by blocking both stress generation and stress relaxation is given.en_US
dc.language.isoen_USen_US
dc.titleStress analysis of spontaneous Sn whisker growthen_US
dc.typeArticleen_US
dc.identifier.doi10.1007/s10854-006-9029-zen_US
dc.identifier.journalJOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICSen_US
dc.citation.volume18en_US
dc.citation.issue1-3en_US
dc.citation.spage269en_US
dc.citation.epage281en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000242853600019-
dc.citation.woscount50-
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